Datasheet > 2SB1498

2SB1498

更新时间： 2024-11-20 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	59K
描述

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数据手册

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2SB1498 数据手册

Power Transistors

2SB1498

Silicon PNP triple diffusion planar type

Unit: mm

7.0±0.3

3.0±0.2

3.5±0.2

For power switching

1.1±0.1

0.85±0.1

0.4±0.1

Features

■

0.75±0.1

●

High-speed switching

●

High collector to base voltage V_CBO

2.3±0.2

●

I type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

4.6±0.4

1:Base

2:Collector

3:Emitter

I Type Package

Absolute Maximum Ratings (T =25˚C)

■

Unit: mm

7.0±0.3

3.5±0.2

2.0±0.2

3.0±0.2

0 to 0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–600

–7

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

– 0.6

– 0.3

2.5

I_C

0.75±0.1

0.5 max.

0.9±0.1

1.1±0.1

0 to 0.15

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

1.3

1:Base

Junction temperature

Storage temperature

T_j

150

˚C

2:Collector

3:Emitter

I Type Package (Y)

2.3±0.2

4.6±0.4

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –600V, I_E= 0

I_EBO

V_CEO

h_FE1

h_FE2

V_EB= –7V, I_C= 0

Collector to emitter voltage

I_C= –10mA, I_B= 0

–600

V_CE= –5V, I_C= –50mA

V_CE= –5V, I_C= –150mA

I_C= –150mA, I_B= –30mA

V_CE= –10V, I_C= –50mA, f = 1MHz

I_C= –150mA,

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–1.0

–1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

1.0

3.5

0.5

I_B1= –30mA, I_B2= 60mA,

V_CC= –200V

µs

12 3

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