生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 560 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 90 MHz | VCEsat-Max: | 0.5 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1460TV4E | ROHM |
获取价格 |
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1460TV4S | ROHM |
获取价格 |
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1460TV4U | ROHM |
获取价格 |
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1460TV6 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1460TV6/S | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1460TV6/SU | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1460TV6E | ROHM |
获取价格 |
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1460TV6U | ROHM |
获取价格 |
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1460U | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | SIP | |
2SB1461 | ROHM |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | SIP |