2SB1462J

更新时间： 2024-02-12 13:40:16

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	68K
描述
For general amplification

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中文翻译

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数据手册

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2SB1462J 数据手册

Transistors

2SB1462J

Silicon PNP epitaxial planar type

+0.05

–0.03

Unit: mm

1.60

+0.03

0.12

–0.01

1.00 0.05

For general amplification

Complementary to 2SD2216J

■ Features

0.27 0.02

• High forward current transfer ratio h_FE

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

(0.50)(0.50)

5˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−60

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Base

2: Emitter

3: Collector

−50

−7

EIAJ: SC-89

SSMini3-F1 Package

Collector current

I_C

I_CP

P_C

T_j

−100

−200

125

°C

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Marking Symbol: A

125

T_stg

−55 to +125

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−60

−50

−7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

I_C= −10 µA, I_E= 0

I_C= −100 µA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_E= 0

V_CE= −10 V, I_C= −2 mA

− 0.1

µA



I_CEO

−100

h_FE

180

390

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= −100 mA, I_B= −10 mA

− 0.3 − 0.5

Transition frequency

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

2.7

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: January 2003

SJC00087BED

12 3

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