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2SB1462R PDF预览

2SB1462R

更新时间: 2024-02-17 01:58:32
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 216K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSMINI3-G1, SC-75, 3 PIN

2SB1462R 技术参数

生命周期:Obsolete零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.83
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):210
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SB1462R 数据手册

 浏览型号2SB1462R的Datasheet PDF文件第2页浏览型号2SB1462R的Datasheet PDF文件第3页浏览型号2SB1462R的Datasheet PDF文件第4页 
Transistors  
2SB1462  
Silicon PNP epitaxial planar type  
For general amplification  
Unit: mm  
+0.1  
+0.1  
0.2  
0.15  
Complementary to 2SD2216  
–0.05  
–0.05  
3
Features  
High forward current transfer ratio hFE  
SS-Mini type package allowing downsizing of the equipment and  
automatic insertion through the tape packing  
1
(0.
.0 0.1  
1.6
5˚  
Absolute Maximum Ratings Ta = 2°C  
Parameter  
Symbl  
VCBO  
VO  
VEBO  
IC  
60  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base ope)  
Emitter-base voltage (Collecto
Collector current  
1 : Base  
2 : Emitter  
3 : Collector  
50  
V
7  
V
EIAJ : SC-75  
10
A  
mA  
mW  
°C  
SSMini3-G1 Package  
Peak collector current  
ICP  
00  
Marking Symbol: A  
Collector power dssipatio
Junction temperate  
PC  
125  
125  
Storage temperaure  
55 to +125  
°C  
ElecCharacterisics Ta 25°C 3°C  
Paramer  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
7  
Typ  
Max  
Unit  
V
Cllector-base voage (Emitter pen)  
Coller voltge (Base open)  
Ee (Collector open)  
Collecturrent (Emitter oen)  
Collector-emcutoff current (Base open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
IC = −10 µA, IE = 0  
IC = −100 µA, IB =
IE = −10 µA, IC = 0  
VCB = −20 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = −10 V, IC = −mA  
V
V
0.1  
µA  
µA  
ICEO  
100  
hFE  
160  
460  
VCE(sat) IC = −100 mA, IB = −10 mA  
0.3 0.5  
V
fT  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
80  
MHz  
pF  
Collector output capacitance  
Cob  
2.7  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
S
No Rank  
hFE  
160 to 260  
210 to 340  
290 to 460  
160 to 460  
Publication date: November 2002  
SJC000272BED  
1

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