Datasheet > 2SB1470Q

2SB1470Q

更新时间： 2024-11-16 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	71K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 160V V(BR)CEO \| 8A I(C) \| TO-247VAR

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数据手册

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2SB1470Q 数据手册

Power Transistors

2SB1470

Silicon PNP triple diffusion planar type darlington

Unit: mm

For power amplification

20.0 0.ꢀ

ꢀ.0 0.ꢁ

(ꢁ.0)

Complementary to 2SD2222

φ ꢁ.ꢁ 0.2

I Features

•

Optimum for 120 W Hi-Fi output

High forward current transfer ratio h_FE

Low collector to emitter saturation voltage V_CE(sat)

(1.ꢀ)

2.0 0.ꢁ

2.7 ^0.ꢁ

ꢁ.0 0.ꢁ

1.0 0.2

I Absolute Maximum Ratings T_C= 25°C

0.6 0.2

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−160

−5

Unit

ꢀ.4ꢀ 0.ꢁ

10.9 0.ꢀ

1 : Base

2 : Collector

3 : Emitter

ꢁ

−15

TOP-3L Package

I_C

−8

Internal Connection

T_C= 25°C

T_a= 25°C

P_C

150

Collector power

dissipation

3.5

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

−100

Unit

µA

Collector cutoff current

V_CB= −160 V, I_E= 0

I_CEO

V_CE= −160 V, I_B= 0

Emitter cutoff current

I_EBO

V_EB= −5 V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

V_CEO

h_FE1

I_C= −30 mA, I_B= 0

−160

1 000

3 500

V_CE= −5 V, I_C= −1 A

V_CE= −5 V, I_C= −7 A

I_C= −7 A, I_B= −7 mA

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

I_C= −7 A, I_B1= −7 mA, I_B2= 7 mA,

V_CC= −50 V

h_FE2

20 000

−3

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)

V_BE(sat)

f_T

−3

MHz

µs

t_on

Storage time

t_stg

1.5

1.2

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE2

3 500 to 10 000 7 000 to 20 000

12 3 4

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