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2SB1475

更新时间: 2024-11-18 06:23:35
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 46K
描述
PNP Silicon Epitaxial Transistor

2SB1475 数据手册

  
SMD Type  
Transistors  
PNP Silicon Epitaxial Transistor  
2SB1475  
Features  
Super miniature package.  
High DC current IC(DC)=500mA max.  
Low VCE(sat): VCE(sat)=-60mV at -100mA  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-25  
Unit  
V
-16  
V
-6  
V
-500  
mA  
mW  
Total power dissipation  
Junction temperature  
PT  
150  
Tj  
150  
Storage temperature range  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
ICBO  
Testconditons  
Min  
110  
Typ  
Max  
-100  
-100  
400  
Unit  
nA  
VCB = -16 V, IE = 0  
IEBO  
VEB = -6.0 V, IC = 0  
nA  
hFE  
VCE = -1.0 V, IC = -100 mA  
IC = -100 mA, IB = -10 mA  
IC = -500 mA, IB = -20 mA  
200  
-60  
-120  
mV  
mV  
V
Collector saturation voltage *  
VCE(sat)  
-250 -400  
-0.95 -1.2  
-0.66 -0.7  
Base saturation voltage *  
Base-emitter voltage *  
Gain bandwidth product  
Output capacitance  
VBE(sat) IC = -2A, IB = -0.1A  
VBE VCE = -1.0 V, IC = -10 mA  
fT VCE = -3.0 V, IE = 100 mA  
VCB = -10 V, IE = 0 , f = 1.0 MHz  
V
50  
MHz  
pF  
Cob  
15  
* Pulsed: PW  
350 µs, duty cycle  
2%  
hFE Classification  
Marking  
hFE  
B42  
110 240  
B43  
190 320  
B44  
270 400  
1
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