Datasheet > 2SB1473

2SB1473

更新时间： 2024-11-17 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
2页	47K
描述

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中文翻译

获取价格

数据手册

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2SB1473 数据手册

Transistor

2SB1473

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to2SD2225

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

Features

High collector to emitter voltage V_CEO

■

●

Satisfactory linearity of forward current transfer ratio h_FE

High transition frequency f_T.

Allowing supply with the radial taping.

0.65 max.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–120

–5

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

–1

type as shown in

the lower figure is

also available.

MT2 Type Package

I_C

– 0.5

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

1.2±0.1

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

0.65

max.

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CEO

V_EBO

Conditions

I_C= –0.1mA, I_B= 0

min

–120

–5

typ

max

Unit

Collector to emitter voltage

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –10V, I_C= –150mA

V_CE= –5V, I_C= –500mA^*2

I_C= –300mA, I_B= –30mA^*2

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

330

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–1.0

–1.2

Transition frequency

f_T

250

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

90 ~ 155

130 ~ 220

185 ~ 330

中文翻译

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与2SB1473相关器件

型号	品牌	获取价格	描述	数据表
2SB1473R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, MT2, 3
2SB1473S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, MT2, 3
2SB1473-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
2SB1474	ROHM	获取价格	Power Transistor (−80V, −4A)
2SB1474A	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-252VAR
2SB1474B	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-252VAR
2SB1474C	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-252VAR
2SB1474F5	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-252
2SB1474F5A	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-252
2SB1474F5B	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-252