生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2.5 A |
集电极-发射极最大电压: | 35 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1407(S) | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2.5A I(C) | TO-252AA | |
2SB1407(S)B | HITACHI |
获取价格 |
Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 | |
2SB1407(S)B | RENESAS |
获取价格 |
2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 | |
2SB1407(S)C | RENESAS |
获取价格 |
2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 | |
2SB1407(S)D | HITACHI |
获取价格 |
Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 | |
2SB1407(S)D | RENESAS |
获取价格 |
2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 | |
2SB1407(S)TL | HITACHI |
获取价格 |
2.5 A, 35 V, PNP, Si, POWER TRANSISTOR | |
2SB1407(S)TR | HITACHI |
获取价格 |
Power Bipolar Transistor, 2.5A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1407B(L) | ETC |
获取价格 |
BJT | |
2SB1407B(S) | ETC |
获取价格 |
BJT |