生命周期: | End Of Life | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 2.5 A |
配置: | Single | 最小直流电流增益 (hFE): | 60 |
最高工作温度: | 150 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 18 W | 子类别: | Other Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1407C(L) | ETC |
获取价格 |
BJT |
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2SB1407C(S) | ETC |
获取价格 |
BJT |
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2SB1407CS | RENESAS |
获取价格 |
2SB1407CS |
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2SB1407D(L) | ETC |
获取价格 |
BJT |
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2SB1407D(S) | ETC |
获取价格 |
BJT |
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2SB1407DL | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-251AA |
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2SB1407DS | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-252AA |
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2SB1407L | HITACHI |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407L | RENESAS |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407LB | HITACHI |
获取价格 |
暂无描述 |
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