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2SB1407DL PDF预览

2SB1407DL

更新时间: 2024-01-21 16:31:03
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 142K
描述
TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-251AA

2SB1407DL 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):2.5 A配置:Single
最小直流电流增益 (hFE):160最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):18 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SB1407DL 数据手册

 浏览型号2SB1407DL的Datasheet PDF文件第2页浏览型号2SB1407DL的Datasheet PDF文件第3页浏览型号2SB1407DL的Datasheet PDF文件第4页浏览型号2SB1407DL的Datasheet PDF文件第5页浏览型号2SB1407DL的Datasheet PDF文件第6页浏览型号2SB1407DL的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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