生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 2.5 A | 配置: | Single |
最小直流电流增益 (hFE): | 160 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 18 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1407DS | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-252AA |
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2SB1407L | HITACHI |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407L | RENESAS |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407LB | HITACHI |
获取价格 |
暂无描述 |
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2SB1407LD | RENESAS |
获取价格 |
暂无描述 |
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2SB1407S | RENESAS |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407S | KEXIN |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407S | HITACHI |
获取价格 |
Silicon PNP Epitaxial |
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2SB1407S | TYSEMI |
获取价格 |
Low frequency power amplifier. Collector to base voltage VCBO -35 V |
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2SB1407S_15 | KEXIN |
获取价格 |
PNP Transistors |
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