是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
风险等级: | 5.33 | 外壳连接: | COLLECTOR |
配置: | SINGLE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1407S_15 | KEXIN |
获取价格 |
PNP Transistors |
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2SB1407SB | HITACHI |
获取价格 |
Si, POWER TRANSISTOR |
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2SB1407SB | RENESAS |
获取价格 |
Si, POWER TRANSISTOR |
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2SB1407S-B | KEXIN |
获取价格 |
PNP Transistors |
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2SB1407S-C | KEXIN |
获取价格 |
PNP Transistors |
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2SB1407SD | HITACHI |
获取价格 |
Si, POWER TRANSISTOR |
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2SB1407S-D | KEXIN |
获取价格 |
PNP Transistors |
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2SB1409 | RENESAS |
获取价格 |
Silicon PNP Epitaxial |
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2SB1409 | HITACHI |
获取价格 |
Silicon PNP Epitaxial |
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2SB1409(L) | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA |
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