是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.33 |
外壳连接: | COLLECTOR | 配置: | SINGLE |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1407S-B | KEXIN |
获取价格 |
PNP Transistors |
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2SB1407S-C | KEXIN |
获取价格 |
PNP Transistors |
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2SB1407SD | HITACHI |
获取价格 |
Si, POWER TRANSISTOR |
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2SB1407S-D | KEXIN |
获取价格 |
PNP Transistors |
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2SB1409 | RENESAS |
获取价格 |
Silicon PNP Epitaxial |
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2SB1409 | HITACHI |
获取价格 |
Silicon PNP Epitaxial |
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2SB1409(L) | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA |
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2SB1409(L)/(S) | ETC |
获取价格 |
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2SB1409(L)B | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251VAR |
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2SB1409(L)C | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251VAR |
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