Datasheet > 2SB1407S_15

2SB1407S_15

更新时间： 2024-01-04 10:13:52

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	906K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1407S_15 数据手册

SMD Type

Transistors

PNP Transistors

2SB1407S

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● Low frequency power amplifier

● Complementary to 2SD2121

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

+0.15

-0.15

4.60

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-35

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-2.5

-3

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-35

-5

Ic= -1 mA， I

E=0

Ic= -10 mA, R^BE=∞

= -1 mA， I

^CB= -35V , I

EB= -5V , I

CBO

EBO

E=0

-20

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base to emitter voltage

CE(sat)

BE(sat)

=-2 A, I

=-200 mA

=-2 A, I

-1.2

-1.5

320

^CE= -2V, I

CE= -2V, I

= -1.5 A

= -500 mA

= -1.5 A

DC current gain

hFE

■ Classification of hfe(1)

Type

2SB1407S-B

60-120

2SB1407S-C

100-200

2SB1407S-D

160-320

Range

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