Datasheet > 2SB1407S

2SB1407S

更新时间： 2024-11-22 05:56:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	39K
描述
Silicon PNP Epitaxial

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中文翻译

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数据手册

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2SB1407S 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial

2SB1407S

TO-252

Unit: mm

Features

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

Low frequency power amplifier.

-0.2

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-35

-5

-2.5

Peak collector current

Collector power dissipation

Junction temperature

I^CP

-3

P^C

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBOIC = -1 mA, IE = 0

V^(BR)CEO

Testconditons

Min

-35

-5

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

IC = -10 mA, RBE =

V^(BR)EBOIE = -1 mA, IC = 0

I^CBO

VCB = -35 V, IE = 0

-20

ìA

V^CE= -2 V,IC = -0.5 A

V^CE= -2 V,IC = -1.5 A

VCE = -2 V,IC = -1.5 A

320

DC current transfer ratio

hFE

Base to emitter voltage

V^BE

-1.5

-1.0

Collector to emitter saturation voltage

V^CE(sat)IC = -2 A,IB = -0.2 A

hFE Classification

Rank

hFE

60 120

100 200

160 320

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