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2SB1407(S)D PDF预览

2SB1407(S)D

更新时间: 2024-01-02 00:11:30
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 142K
描述
2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3

2SB1407(S)D 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.33Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):2.5 A
集电极-发射极最大电压:35 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SB1407(S)D 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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