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2SB1397

更新时间: 2024-01-27 22:15:29
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 52K
描述
PNP Epitaxial Planar Silicon Transistors

2SB1397 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.46
其他特性:BUILT IN BIAS RESISTOR外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:20 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:1.3 W最大功率耗散 (Abs):1.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

2SB1397 数据手册

  
SMD Type  
Transistors  
PNP Epitaxial Planar Silicon Transistors  
2SB1397  
Features  
Low saturation voltage.  
Contains diode between collector and emitter.  
Contains bias resistance between base and emitter.  
Large current capacity.  
Small-sized package making it easy to provide highdensity,  
small-sized hybrid ICs.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-25  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-20  
V
-6  
V
-2  
-4  
A
Collector current (pulse)  
Collector dissipation  
Jumction temperature  
Storage temperature  
ICP  
A
PC *  
Tj  
1.3  
W
150  
Tstg  
-55 to +150  
* Mounted on ceramic board (250mm2X0.8mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-1  
Unit  
nA  
Collector cutoff current  
VCB = -20V , IE = 0  
VCE = -2V , IC = -0.5A  
VCE = -2V , IC = -2A  
VCE = -2V , IC = -0.5A  
VCB = -10V , f = 1MHz  
IC = -1A , IB = -50mA  
IC = -1A , IB = -50mA  
IC = -10ìA , IE = 0  
IC = -10ìA , RBE =  
IC = -10mA , RBE =  
IF=0.5A  
70  
50  
DC current Gain  
hFE  
Gain bandwidth product  
fT  
300  
40  
MHz  
pF  
V
Output capacitance  
Cob  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-to-base breakdown voltage  
VCE(sat)  
VBE(sat)  
V(BR)CBO  
-0.25 -0.5  
-1.5  
V
-25  
-25  
-20  
V
Collector-to-emitter breakdown voltage  
Collector-to-emitter breakdown voltage  
Diode forward voltage  
V(BR)CEO1  
V(BR)CEO2  
VF  
V
-1.5  
1.6  
V
Base-emitter resistance  
RBE  
KÙ  
Marking  
Marking  
BP  
1
www.kexin.com.cn  

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