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2SB1397

更新时间: 2024-11-22 06:24:07
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 52K
描述
PNP Epitaxial Planar Silicon Transistors

2SB1397 数据手册

  
SMD Type  
Transistors  
PNP Epitaxial Planar Silicon Transistors  
2SB1397  
Features  
Low saturation voltage.  
Contains diode between collector and emitter.  
Contains bias resistance between base and emitter.  
Large current capacity.  
Small-sized package making it easy to provide highdensity,  
small-sized hybrid ICs.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-25  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-20  
V
-6  
V
-2  
-4  
A
Collector current (pulse)  
Collector dissipation  
Jumction temperature  
Storage temperature  
ICP  
A
PC *  
Tj  
1.3  
W
150  
Tstg  
-55 to +150  
* Mounted on ceramic board (250mm2X0.8mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-1  
Unit  
nA  
Collector cutoff current  
VCB = -20V , IE = 0  
VCE = -2V , IC = -0.5A  
VCE = -2V , IC = -2A  
VCE = -2V , IC = -0.5A  
VCB = -10V , f = 1MHz  
IC = -1A , IB = -50mA  
IC = -1A , IB = -50mA  
IC = -10ìA , IE = 0  
IC = -10ìA , RBE =  
IC = -10mA , RBE =  
IF=0.5A  
70  
50  
DC current Gain  
hFE  
Gain bandwidth product  
fT  
300  
40  
MHz  
pF  
V
Output capacitance  
Cob  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-to-base breakdown voltage  
VCE(sat)  
VBE(sat)  
V(BR)CBO  
-0.25 -0.5  
-1.5  
V
-25  
-25  
-20  
V
Collector-to-emitter breakdown voltage  
Collector-to-emitter breakdown voltage  
Diode forward voltage  
V(BR)CEO1  
V(BR)CEO2  
VF  
V
-1.5  
1.6  
V
Base-emitter resistance  
RBE  
KÙ  
Marking  
Marking  
BP  
1
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