Datasheet > 2SB1404

2SB1404

更新时间： 2024-11-22 06:18:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	129K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB1404 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1400

DESCRIPTION

·With TO-220Fa package

·High DC current gain

·Low collector saturation voltage

·DARLINGTON

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-120

-7

UNIT

Open emitter

Open base

Open collector

-6

I_CM

Collector current-peak

-10

T_a=25ꢀ

T_C=25ꢀ

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_stg

12 3

中文翻译

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2SB1407(L)/(S)	ETC	获取价格
2SB1407(L)B	HITACHI	获取价格	暂无描述
2SB1407(L)C	HITACHI	获取价格	Power Bipolar Transistor, Plastic/Epoxy, 3 Pin, DPAK-3
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