Datasheet > 2SB1398Q

2SB1398Q

更新时间： 2024-11-21 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	51K
描述
TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 5A I(C) \| SIP

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中文翻译

获取价格

数据手册

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2SB1398Q 数据手册

Transistor

2SB1398

Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Large collector current I_C.

Allowing supply with the radial taping.

0.65 max.

Absolute Maximum Ratings (Ta=25˚C)

0.45⁺–0⁰.^.0¹5

■

2.5±0.5 2.5±0.5

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–30

–25

–7

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

–8

the upper figure, the 3:Base

I_C

–5

type as shown in

the lower figure is

also available.

MT2 Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

1.2±0.1

0.65

max.

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

_CB= –10V, I_E= 0

min

typ

max

Unit

Collector cutoff current

Emitter cutoff current

–100

I_EBO

V_EB= –5V, I_C= 0

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CEO

V_EBO

I_C= –1mA, I_B= 0

–25

–7

I_E= –10µA, I_C= 0

h_FE

V_CE= –2V, I_C= –2A^*2

I_C= –3A, I_B= –0.1A^*2

V_CB= –6V, I_E= 50mA, f = 200MHz

V_CB= –20V, I_E= 0, f = 1MHz

205

–1

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

120

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

Rank

h_FE

90 ~ 135

120 ~ 205

12 3

中文翻译

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