Datasheet > 2SB1386R

2SB1386R

更新时间： 2024-11-17 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	92K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| SC-62

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中文翻译

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数据手册

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2SB1386R 数据手册

2SB1386 / 2SB1412 / 2SB1326

Transistors

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412 / 2SB1326

!External dimensions (Units : mm)

!Features

1) Low V^CE(sat).

2SB1386

2SB1412

0.2

V^CE(sat)= −0.35V (Typ.)

(I^C/I^B= −4A / −0.1A)

2) Excellent DC current gain

characteristics.

2.3

6.5 0.2

−

0.1

+0.2

4.5

C0.5

−0.1

+0.2

5.1

+0.2

0.5 0.1

1.5

−0.1

1.6 0.1

−0.1

3) Complements the 2SD2098 /

2SD2118 / 2SD2097.

(1) (2) (3)

0.75

0.65 0.1

+0.1

0.4

−0.05

0.9

0.4 0.1

1.5 0.1

0.5 0.1

3.0 0.2

0.4 0.1

1.5 0.1

0.55 0.1

1.0 0.2

2.3 0.2 2.3 0.2

(1) (2) (3)

!Structure

Epitaxial planar type

PNP silicon transistor

(1) Base

(2) Collector

(3) Emitter

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

ROHM : CPT3

EIAJ : SC-63

Abbreviated symbol: BH∗

2SB1326

2.5 0.2

6.8 0.2

0.65Max.

0.5 0.1

(1) (2) (3)

2.54 2.54

1.05

0.45 0.1

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

∗ Denotes hFE

12 3 4

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