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2SB1386RGP PDF预览

2SB1386RGP

更新时间: 2024-11-18 13:04:11
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 367K
描述
Transistor,

2SB1386RGP 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SB1386RGP 数据手册

 浏览型号2SB1386RGP的Datasheet PDF文件第2页浏览型号2SB1386RGP的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
2SB1386PPT  
SMALL FLAT  
PNP Epitaxial Transistor  
VOLTAGE 20 Volts CURRENT 5 Amperes  
APPLICATION  
* Power driver and Strobe Flash .  
FEATURE  
* Small flat package. (DPAK)  
DPAK  
* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)  
* High saturation current capability.  
.094 (2.38)  
.086 (2.19)  
.022 (0.55)  
.018 (0.45)  
MARKING  
* hFE Classification P : P86  
Q : Q86  
(1) (3)  
(2)  
R: R86  
.028 (0.70)  
.019 (0.50)  
.035 (0.90)  
.024 (0.60)  
.181 (4.60)  
.268 (6.80)  
.252 (6.40)  
.023 (0.58)  
.018 (0.46)  
C
E
(3)  
(2)  
CIRCUIT  
1 Base  
2 Emitter  
(1)  
B
3 Collector ( Heat Sink )  
Dimensions in inches and (millimeters)  
DPAK  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
CONDITION  
Open Emitter  
SYMBOL  
VCBO  
UNITS  
Volts  
2SB1386PPT  
Collector - Base Voltage  
-30  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current DC  
Open Base  
VCEO  
VEBO  
IC  
-20  
-6  
Volts  
Volts  
Amps  
Open Collector  
-5  
Peak Collector Current  
Total Power Dissipation  
Storage Temperature  
ICM  
-10  
1.0  
Amps  
W
TA 25OC; Note 1  
PTOT  
TSTG  
-55 to +150  
oC  
Junction Temperature  
TJ  
+150  
oC  
oC  
Operating Ambient Temperature  
TAMB  
-55 to +150  
2007-05  
Note  
1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.  

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