是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.62 | 外壳连接: | COLLECTOR |
配置: | SINGLE | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1386T100/PR | ROHM |
获取价格 |
5A, 20V, PNP, Si, POWER TRANSISTOR | |
2SB1386T100/Q | ROHM |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN | |
2SB1386T100/QR | ROHM |
获取价格 |
5A, 20V, PNP, Si, POWER TRANSISTOR | |
2SB1386T100PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1386T100PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1386T100Q | ROHM |
获取价格 |
Low frequency transistor (â20V,â5A) | |
2SB1386T100QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1386T100R | ROHM |
获取价格 |
Low frequency transistor (â20V,â5A) | |
2SB1386T101 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1386T101/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, |