Datasheet > 2SB1386U

2SB1386U

更新时间： 2023-12-06 20:01:11

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	1046K
描述
功率三极管

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2SB1386U 数据手册

2SB1386U

PNP Silicon Epitaxial Planar Transistor

Features

• Low frequency transistor

Absolute Maximum Ratings (T_a= 25 )

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current - DC

Collector Current - Pulse ¹⁾

-I_C

-I_CP

0.5 ²⁾

2 ³⁾

P_C

Collector Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

250 ²⁾

62.5³⁾

Unit

Thermal Resistance from Junction to Ambient

¹⁾Single pulse, PW = 10 ms.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

³⁾When mounted on a 40 x 40 x 0.7 mm ceramic board.

1 / 5

Dated：24/08/2021 Rev：04

12 3 4 5

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