5秒后页面跳转
2SB1301-T1ZQ PDF预览

2SB1301-T1ZQ

更新时间: 2024-11-23 14:34:27
品牌 Logo 应用领域
日电电子 - NEC 开关晶体管
页数 文件大小 规格书
3页 84K
描述
Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PLASTIC, SC-62, 3 PIN

2SB1301-T1ZQ 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:16 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:2 W认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
VCEsat-Max:0.35 VBase Number Matches:1

2SB1301-T1ZQ 数据手册

 浏览型号2SB1301-T1ZQ的Datasheet PDF文件第2页浏览型号2SB1301-T1ZQ的Datasheet PDF文件第3页 

与2SB1301-T1ZQ相关器件

型号 品牌 获取价格 描述 数据表
2SB1301-T1ZR NEC

获取价格

Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB1301-T2 NEC

获取价格

Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB1301-T2ZQ NEC

获取价格

Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB1301-T2ZR NEC

获取价格

Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB1301ZP NEC

获取价格

3000mA, 16V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
2SB1301ZQ NEC

获取价格

Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB1301ZR NEC

获取价格

Small Signal Bipolar Transistor, 3A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB1302 TYSEMI

获取价格

Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
2SB1302 SANYO

获取价格

High-Current Switching Applications
2SB1302 KEXIN

获取价格

PNP Epitaxial Planar Silicon Transistors