Datasheet > 2SB1302-T

2SB1302-T

更新时间： 2024-11-20 01:09:39

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1212K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1302-T 数据手册

SMD Type

Transistors

PNP Transistors

2SB1302

1.70 0.1

■ Features

● Low collector-to-emitter saturation voltage.

● Large current capacity.

0.42 0.1

● Fast switching speed.

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-25

-20

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-5

-8

1.3

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-25

-20

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 uA， I

Ic= -1 mA, RBE=∞

= -100 uA， I =0

CB= -20V , I =0

EB= -4V , I =0

E=0

CBO

EBO

-0.5

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-3 A, I

=-60 mA

-0.25 -0.5

=-6 A, I

-1

-1.3

400

CE= -2V, I

= -500 mA

= -4 A

100

DC current gain

hFE

Turn-ON Time

200

See specified Test Circuit.

Storage Time

stg

Fall Time

Collector output capacitance

Transition frequency

^CB= -10V, I

= 0,f=1MHz

^CE= -5V, I = -200 mA

320

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1302-R

100-200

BJ R*

2SB1302-S

140-280

BJ S*

2SB1302-T

200-400

BJ T*

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