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2SB1302 PDF预览

2SB1302

更新时间: 2024-11-19 06:24:31
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
2页 58K
描述
PNP Epitaxial Planar Silicon Transistors

2SB1302 数据手册

 浏览型号2SB1302的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Epitaxial Planar Silicon Transistors  
2SB1302  
Features  
Adoption of FBET, MBIT processes.  
Low collector-to-emitter saturation voltage.  
Large current capacity.  
Fast switching speed.  
Very small size making it easy to provide highdensity,  
small-sized hybrid ICs.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-25  
-20  
V
-5  
V
-5  
-8  
A
Collector current (pulse)  
Collector dissipation  
ICP  
A
PC  
1.3  
W
Jumction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
1
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