Datasheet > 2SB1302R

2SB1302R

更新时间： 2024-11-18 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	98K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-247

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2SB1302R 数据手册

Ordering number:EN2555A

PNP Epitaxial Planar Silicon Transistor

2SB1302

High-Current Switching Applications

Applications

Package Dimensions

unit:mm

· DC-DC converters, motor drivers, relay drivers, lamp

drivers.

2038

[2SB1302]

Features

· Adoption of FBET, MBIT processes.

· Low collector-to-emitter saturation voltage.

· Large current capacity.

· Fast switching speed.

· Very small size making it easy to provide high-

density, small-sized hybrid ICs.

E : Emitter

C : Collector

B : Base

SANYO : PCP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

–25

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

–20

CEO

–5

EBO

–5

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

–8

1.3

Mounted on ceramic board (250mm²×0.8mm)

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=–20V, I =0

–500

400*

CBO

Emitter Cutoff Current

DC Current Gain

=–4V, I =0

EBO

=–2V, I =–500mA

=–2V, I =–4A

=–5V, I =–200mA

=–10V, f=1MHz

100*

Gain-Bandwidth Product

Output Capacitance

320

MHz

* : The 2SB1302 is classified by 500mA h as follows :

100

200 140

280 200

400

Marking : BJ

rank : R, S, T

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1598HA (KT)/D2680MO/4097TA, TS No.2555–1/4

12 3 4

中文翻译

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与2SB1302R相关器件

型号	品牌	获取价格	描述	数据表
2SB1302-R	KEXIN	获取价格	PNP Transistors
2SB1302S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-247
2SB1302-S	KEXIN	获取价格	PNP Transistors
2SB1302S-TD-E	ONSEMI	获取价格	Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP
2SB1302T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-247
2SB1302-T	KEXIN	获取价格	PNP Transistors
2SB1302T-TD-E	ONSEMI	获取价格	Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP
2SB1306	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1306/P	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/E
2SB1306/PQ	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/E

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