Datasheet > 2SB1197KXLT1

2SB1197KXLT1

更新时间： 2024-11-13 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	316K
描述
Low Frequency Transistor

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2SB1197KXLT1 数据手册

WILLAS

2SB1197KxLT1

Low Frequency Transistor

PNP Silicon

FEATURE

ƽHigh current capacity in compact package.

I_C= í0.8A.

ƽEpitaxial planar type.

ƽNPN complement: 2SD1781K

We declare that the material of product compliance with RoHS requirements.

SOT– 23

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

COLLECTOR

DEVICE MARKING AND ORDERING INFORMATION

BASE

Marking

Device

Shipping

2SB1197KQLT1

2SB1197KRLT1

AHQ

AHR

3000/Tape&Reel

EMITTER

MAXIMUM RATINGS(Ta=25qC)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

VCEO

VEBO

−40

−32

−5

−0.8

Collector power dissipation

Junction temperature

Storage temperature

0.2

°C

150

Tstg

−55 to 150

ELECTRICAL CHARACTERISTICS(Ta=25qC)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

BV^CEO

BV^EBO

−40

−32

−5

−

= −50

= −1mA

= −50

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

CBO

EBO

−

−0.5

390

−

^CB= −20V

^EB= −4V

−

Emitter cutoff current

CE(sat)

−

IC/IB= −0.5A/ −50mA

Collector-emitter saturation voltage

DC current transfer ratio

120

−

^CE= −3V, I

^CE= −5V, I

= −100mA

=50mA, f=100MHz

=0A, f=1MHz

200

MHz

Transition frequency

Cob

−

^CB= −10V, I

Output capacitance

h_FEvalues are classified as follows :

Item(*)

h_FE

120~270

180~390

2012-11

WILLAS ELECTRONIC CORP.

12 3

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