2SB1197-R

更新时间： 2024-09-25 04:25:51

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
4页	445K
描述
PNP Silicon Epitaxial Transistors

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中文翻译

获取价格

数据手册

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2SB1197-R 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SB1197

FEATURES

Lead-free

Small surface mounting type.

Corredtor peak current(Max.=1000mA)

Suitable for high packing density.

Low voltage(Max.=40v)

High saturation current capability.

Voltage controlled small signal switch.

APPLICATIONS

SOT-23

Telephone and professional communication equipment.

Other switching appilications.

ORDERING INFORMATION

Type No.

2SB1197

Marking

Package Code

SOT-23

AHP,AHQ,AHR

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-40

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-32

-5

Collector Current -Continuous

Collector Dissipation

-800

200

℃

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC016

Rev.A

www.galaxycn.com

12 3 4

中文翻译

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