Datasheet > 2SB1198K

2SB1198K

更新时间： 2024-09-15 06:18:59

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	137K
描述
PNP Silicon General Purpose Transistor

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中文翻译

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数据手册

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2SB1198K 数据手册

2SB1198K

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SC-59

Min

Dim

Max

3.10

1.70

1.30

0.50

2.30

0.10

0.26

0.60

1.65

3.00

2.70

1.30

1.00

0.35

1.70

0.00

0.10

0.20

1.25

2.25

Top View

FEATURES

Power dissipation

P_CM

Collector current

I_CM

: 0.2

: -0.5

All Dimension in mm

Collector-base voltage

V_(BR)CBO: -80

COLLECTOR

Operating and storage junction temperature range

T_JT_stg: -55 to +150

BASE

EMITTER

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50 A,I_E=0

MIN

-80

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-2mA,I_B=0

I_E=-50 A,I_C=0

V_CB=-50V,I_E=0

-0.5

390

-0.5

Emitter cut-off current

I_EBO

V_EB=-4V,I_C=0

DC current gain

h_FE(1)

V_CE=-3V,I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-10V,I_C=-50mA

V_CB=-10V,I_E=0,f=1MHz

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

MHz

f_T

180

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

120-270

180-390

Range

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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