Datasheet > 2SB1198

2SB1198

更新时间： 2024-09-25 04:25:51

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	119K
描述
LOW FREQUENCY PNP TRANSISTOR

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数据手册

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2SB1198 数据手册

UTC2SB1198

PNPEPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY PNP

TRANSISTOR

DESCRIPTION

The UTC 2SB1198 is an epitaxial planar type PNP silicon

transistor.

FEATURES

*High breakdown voltage : BVCEO= -80V

*Low V^CE(sat) : VCE(sat)= -0.2V (Typ)

(Ic/IB = -0.5A/-50mA)

SOT-23

1:EMITTER

2:BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

LIMITS

-80

-5

-0.5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

TSTG

0.2

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

TEST CONDITIONS

Ic= -50μA

MIN TYP MAX UNIT

-80

-5

μA

Ic= -2mA

IE= -50μA

VCB= -50V

VEB= -4V

VCE(sat) Ic/IB= -0.5A/-50mA

-0.5

390

Emitter Cut-Off Current

IEBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

-0.2

hFE

Cob

VCE= -3V,Ic= -0.1A

VCE=-10V,IE= 50 mA, f=100MHz

VCB= -10V, IE= 0 A, f=1MHz

120

180

MHz

Output Capacitance

CLASSIFICATION OF hFE

RANK

RANGE

120-270

AKQ

180-390

AKR

MARKING

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R206-040,A

12 3

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