Datasheet > 2SB1198

2SB1198

更新时间： 2024-09-14 14:52:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		光电二极管
页数	文件大小	规格书
4页	645K
描述
SOT-23

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中文翻译

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数据手册

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2SB1198 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

2SB1198 ^{TRANSISTOR (PNP)}

FEATURES

1. ^BASE

Low V_CE(sat)

High breakdown voltage

2. ^EMITTER

3. ^COLLECTOR

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-80

Units

Collector-Base Voltage

Collector-Emitter Voltage

-80

Emitter-Base Voltage

-5

Collector Current -Continuous

Collector Power Dissipation

Operation Junction and Storage Temperature Range

-500

200

℃

P_C

T_J,T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

-80

I_C=-50μA, I_E=0

V_(BR)CEOI_C=-2mA, I_B=0

-80

-5

V_(BR)EBO

I_CBO

I_E=-50μA, I_C=0

V_CB=-50V, I_E=0

V_EB=-4V, I_C=0

-0.5

390

-0.5

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE(1)

V_CE(sat)

f_T

V_CE=-3V, I_C=-100mA

120

Collector-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-50mA

V_CE=-10V, I_C=-50mA, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

180

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

120-270

AKQ

180-390

MARKING

AKR

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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