2SB1197KQ-G

更新时间： 2024-11-30 13:04:11

品牌	Logo	应用领域
TRSYS		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	69K
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中文翻译

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数据手册

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2SB1197KQ-G 数据手册

Transys

Electronics

I M I T E D

SOT-23-3L Plastic-Encapsulated Transistors

SOT-23-3L

1. ^BASE

2. ^EMITTER

3. ^COLLECTOR

2SB1197K TRANSISTOR (PNP)

FEATURES

Power dissipation

P_CM:

200 mW (Tamb=25℃)

2. 80¡ À0. 05

1. 60¡ À0. 05

Collector current

I_CM:

-800 mA

Collector-base voltage

V_(BR)CBO-40 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50µA, I_E=0

MIN

-40

-32

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Ic=-1mA, I_B=0

I_E=-50µA, I_C=0

V_CB=-20V, I_E=0

V_EB=-4V, I_C=0

-0.5

390

-0.5

µA

I_EBO

Emitter cut-off current

h_FE(1)

V_CE=-3V, I_C=-100mA

I_C=-0.5A, I_B=-50mA

DC current gain

V_CE(sat)

Collector-emitter saturation voltage

V_CE=-5V, I_C=-50mA

f_T

200

MHz

Transition frequency

f=100MHz

V_CE=-10V, I_C=0

Cob

Collector output capacitance

f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

82-180

120-270

AHQ

180-390

Marking

AHP

AHR

中文翻译

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