2SB1197KT146/R

更新时间： 2024-02-13 18:02:21

品牌	Logo	应用领域
罗姆 - ROHM		晶体小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
3页	58K
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2SB1197KT146/R 数据手册

2SB1197K

Transistors

Low Frequency Transistor (ꢀ32V, ꢀ0.8A)

2SB1197K

zExternal dimensions (Unit : mm)

zFeatures

1) Low V^CE(sat).

V^CE(sat)͟ ꢀ0.5V

̈́I^C/ IB= ꢀ0.5A / ꢀ50mAͅ

2) IC = ꢀ0.8A.

3) Complements the 2SD1781K.

2.9 0.2

1.9 0.2

0.95 0.95

0.2

1.1

−0.1

0.8 0.1

(2)

(1)

0~0.1

(3)

All terminals have the

same dimensions

0.1

0.15

−0.06

0.4

−0.05

zStructure

(1) Emitter

(2) Base

(3) Collector

Epitaxial planar type

PNP silicon transistor

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol: AH

∗

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25qC)

Parameter

Symbol

Limits

−40

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

−32

−5

−0.8

Collector power dissipation

Junction temperature

Storage temperature

0.2

°C

150

Tstg

−55 to 150

zElectrical characteristics (Ta=25qC)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

−40

−32

−5

−

= −50

= −1mA

= −50

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BVCEO

BVEBO

−

μA

CBO

EBO

CE(sat)

−

−0.5

390

−

CB= −20V

EB= −4V

−

Emitter cutoff current

−

IC/IB= −0.5A/ −50mA

Collector-emitter saturation voltage

DC current transfer ratio

120

−

CE= −3V, I

= −100mA

=50mA, f=100MHz

=0A, f=1MHz

200

MHz

CE= −5V, I

Transition frequency

Cob

−

CB= −10V, I

Output capacitance

Rev.A

1/2

12 3

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