2SB1176H

更新时间： 2024-11-18 12:59:55

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管功率双极晶体管开关光电二极管
页数	文件大小	规格书
4页	94K
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中文翻译

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2SB1176H 数据手册

Power Transistors

2SB1176

Silicon PNP epitaxial planar type

For voltage switching

Unit: mm

Complementary to 2SD1746

7.0 0.3

3.5 0.2

0˚ to 0.15˚

3.0 0.2

2.0 0.2

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• Satisfactory linearity of forward current transfer ratio h_FE

• Large collector current I_C

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

1.1 0.1

0.75 0.1 0.4 0.1

0.9 0.1

0˚ to 0.15˚

2.3 0.2

■ Absolute Maximum Ratings T_C= 25°C

4.6 0.4

Parameter

Symbol

Rating

−130

−80

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Base

2: Collector

3: Emitter

−7

I-G1 Package

Collector current

I_C

I_CP

P_C

−5

Note) Self-supported type package is also prepared.

Peak collector current

Collector power dissipation

−10

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= −10 mA, I_B= 0

−80

V_CB= −100 V, I_E= 0

V_EB= −5 V, I_C= 0

−10

−50

µA



I_EBO

h_FE1

V_CE= −2 V, I_C= − 0.1 A

V_CE= −2 V, I_C= −2 A

h_FE2

260

− 0.5

−1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −4 A, I_B= − 0.2 A

V_BE(sat)I_C= −4 A, I_B= − 0.2 A

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

MHz

µs

0.13

0.5

I_C= −2 A, I_B1= − 0.2 A, I_B2= 0.2 A

V_CC= −50 V

Storage time

µs

Fall time

0.13

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

90 to 180

130 to 260

Publication date: March 2003

SJD00052AED

12 3 4

中文翻译

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与2SB1176H相关器件

型号	品牌	获取价格	描述	数据表
2SB1176P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-221VAR
2SB1176-P	KEXIN	获取价格	PNP Transistors
2SB1176Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-221VAR
2SB1176-Q	KEXIN	获取价格	PNP Transistors
2SB1176R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-221VAR
2SB1176TX	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1177	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 7A I(C) \| TO-221VAR
2SB1177H	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1177P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 7A I(C) \| TO-221VAR
2SB1177Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 7A I(C) \| TO-221VAR

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