Datasheet > 2SB1176

2SB1176

更新时间： 2024-11-18 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	40K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

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数据手册

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2SB1176 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB1176

Features

TO-252

Unit: mm

Low collector-emitter saturation voltage VCE(sat).

Satisfactory linearity of forward current transfer ratio hFE.

Large collector current IC.

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

-130

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-7

-5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-10

P^C

1.3

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

I^CEO

Testconditons

Min

-80

Typ

Max

Unit

Collector-emitter voltage

Collector-emitter cutoff curent

Emitter-base cutoff current

IC = -10 mA, IB = 0

VCE = -100 V,IB = 0

VEB = -5 V, IC = 0

-10

-50

260

ìA

I^EBO

VCE = -2 V, IC = -2 A

V^CE= -2 V, IC = -0.1 A

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V^CE(sat)IC = -4 A, IB = -0.2 A

V^BE(sat)IC = -4 A, IB = -0.2 A

-0.5

-1.5

f^T

t^on

t^stg

t^f

VCE = -10 V, IC = -0.5 A , f = 10 MHz

MHz

ìs

0.13

0.5

I^C= -2 A,IB1 = -0.2 A,IB2 = 0.2 A, VCC =

-50 V

Storage time

ìs

Fall time

0.13

ìs

hFE Classification

Rank

h^FE

90 180

130 260

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与2SB1176相关器件

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2SB1176H	PANASONIC	获取价格	暂无描述
2SB1176P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-221VAR
2SB1176-P	KEXIN	获取价格	PNP Transistors
2SB1176Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-221VAR
2SB1176-Q	KEXIN	获取价格	PNP Transistors
2SB1176R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-221VAR
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2SB1177H	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3