Datasheet > 2SB1030/2SB1030A

2SB1030/2SB1030A

更新时间： 2024-11-23 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	51K
描述
2SB1030. 2SB1030A - PNP Transistor

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中文翻译

获取价格

数据手册

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2SB1030/2SB1030A 数据手册

Transistor

2SB1030, 2SB1030A

Silicon PNP epitaxial planer type

For low-frequency amplification

Unit: mm

Complementary to 2SD1423 and 2SD1423A

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

–30

Unit

marking

Collector to

2SB1030

2SB1030A

2SB1030

V_CBO

base voltage

Collector to

–60

–25

V_CEO

emitter voltage 2SB1030A

Emitter to base voltage

Peak collector current

Collector current

–50

1.27 1.27

2.54±0.15

V_EBO

I_CP

I_C

–7

–1

1:Emitter

2:Collector

3:Base

– 0.5

300

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

– 0.1

–1

Unit

µA

V_CB= –20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –20V, I_B= 0

µA

Collector to base

voltage

2SB1030

2SB1030A

–30

–60

–25

–50

–7

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter 2SB1030

V_CEO

V_EBO

I_C= –2mA, I_B= 0

voltage

2SB1030A

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –10V, I_C= –150mA^*2

V_CE= –10V, I_C= –500mA^*2

I_C= –300mA, I_B= –30mA^*2

340

– 0.6

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

– 0.35

200

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3

中文翻译

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与2SB1030/2SB1030A相关器件

型号	品牌	获取价格	描述	数据表
2SB1030A	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-frequency amplification)
2SB1030AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK
2SB1030AR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK
2SB1030AS	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SPAK
2SB1030Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SPAK
2SB1030R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SPAK
2SB1030S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SPAK
2SB1031	HITACHI	获取价格	SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING
2SB1031K	HITACHI	获取价格	LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K
2SB1032	HITACHI	获取价格	Silicon PNP Triple Diffused