2SB1034

更新时间： 2024-01-20 14:22:52

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	116K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SB1034 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SB1034 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1034

DESCRIPTION

·With TO-126 package

·Low collector saturation voltage

·High DC current gain

·DARLINGTON

APPLICATIONS

·For power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Base current (DC)

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-80

Open collector

-8

-2

I_B

-0.5

P_C

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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