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2SB1030AR PDF预览

2SB1030AR

更新时间: 2024-11-23 23:20:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
3页 51K
描述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SPAK

2SB1030AR 数据手册

 浏览型号2SB1030AR的Datasheet PDF文件第2页浏览型号2SB1030AR的Datasheet PDF文件第3页 
Transistor  
2SB1030, 2SB1030A  
Silicon PNP epitaxial planer type  
For low-frequency amplification  
Unit: mm  
Complementary to 2SD1423 and 2SD1423A  
4.0±0.2  
Features  
Optimum for high-density mounting.  
Allowing supply with the radial taping.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
–30  
Unit  
marking  
Collector to  
2SB1030  
2SB1030A  
2SB1030  
VCBO  
V
1
2
3
base voltage  
Collector to  
–60  
–25  
VCEO  
V
emitter voltage 2SB1030A  
Emitter to base voltage  
Peak collector current  
Collector current  
–50  
1.27 1.27  
2.54±0.15  
VEBO  
ICP  
IC  
–7  
V
A
–1  
1:Emitter  
2:Collector  
3:Base  
– 0.5  
300  
A
EIAJ:SC–72  
New S Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
mW  
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
– 0.1  
–1  
Unit  
µA  
VCB = –20V, IE = 0  
Collector cutoff current  
ICEO  
VCE = –20V, IB = 0  
µA  
Collector to base  
voltage  
2SB1030  
2SB1030A  
–30  
–60  
–25  
–50  
–7  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter 2SB1030  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
voltage  
2SB1030A  
Emitter to base voltage  
IE = –10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = –10V, IC = –150mA*2  
VCE = –10V, IC = –500mA*2  
IC = –300mA, IB = –30mA*2  
85  
340  
– 0.6  
15  
Forward current transfer ratio  
40  
Collector to emitter saturation voltage VCE(sat)  
– 0.35  
200  
6
V
MHz  
pF  
Transition frequency  
fT  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
Collector output capacitance  
Cob  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

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