Datasheet > 2SB1030R

2SB1030R

更新时间： 2024-09-25 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	51K
描述
TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SPAK

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中文翻译

获取价格

数据手册

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2SB1030R 数据手册

Transistor

2SB1030, 2SB1030A

Silicon PNP epitaxial planer type

For low-frequency amplification

Unit: mm

Complementary to 2SD1423 and 2SD1423A

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

–30

Unit

marking

Collector to

2SB1030

2SB1030A

2SB1030

V_CBO

base voltage

Collector to

–60

–25

V_CEO

emitter voltage 2SB1030A

Emitter to base voltage

Peak collector current

Collector current

–50

1.27 1.27

2.54±0.15

V_EBO

I_CP

I_C

–7

–1

1:Emitter

2:Collector

3:Base

– 0.5

300

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

– 0.1

–1

Unit

µA

V_CB= –20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= –20V, I_B= 0

µA

Collector to base

voltage

2SB1030

2SB1030A

–30

–60

–25

–50

–7

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter 2SB1030

V_CEO

V_EBO

I_C= –2mA, I_B= 0

voltage

2SB1030A

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –10V, I_C= –150mA^*2

V_CE= –10V, I_C= –500mA^*2

I_C= –300mA, I_B= –30mA^*2

340

– 0.6

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

– 0.35

200

MHz

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3

中文翻译

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