生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.72 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 7 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1018Y | ISC |
获取价格 |
Transistor | |
2SB1019 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1019 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1019 | TOSHIBA |
获取价格 |
TRANSISTOR 7 A, 50 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SB1019_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1019_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1019O | ISC |
获取价格 |
Transistor | |
2SB1019Y | ISC |
获取价格 |
暂无描述 | |
2SB1020 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1020 | ISC |
获取价格 |
Silicon PNP Power Transistors |