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2SB1021_2014 PDF预览

2SB1021_2014

更新时间: 2024-11-25 01:19:15
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
3页 150K
描述
Silicon PNP Power Transistors

2SB1021_2014 数据手册

 浏览型号2SB1021_2014的Datasheet PDF文件第2页浏览型号2SB1021_2014的Datasheet PDF文件第3页 
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB1021  
DESCRIPTION  
·With TO-220Fa package  
·High DC current gain  
·Low saturation voltage  
·Complement to type 2SD1416  
APPLICATIONS  
·High power switching applications  
·Hammer drive,pulse motor drive applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector -emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-80  
UNIT  
V
V
V
A
A
Open base  
-80  
Open collector  
-5  
-7  
IB  
Base current  
-0.2  
2.0  
Ta=25  
TC=25℃  
PC  
Collector power dissipation  
W
30  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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