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2SB1020A_06 PDF预览

2SB1020A_06

更新时间: 2024-11-24 03:56:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 153K
描述
Silicon PNP Triple Diffused Type (Darlington Power)

2SB1020A_06 数据手册

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2SB1020A  
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)  
2SB1020A  
High-Power Switching Applications  
Unit: mm  
Hammer Drive, Pulse Motor Drive Applications  
High DC current gain: h  
= 2000 (min) (V  
= 3 V, I = 3 A)  
FE  
CE C  
Low saturation voltage: V  
= 1.5 V (max) (I = 3 A)  
C
CE (sat)  
Complementary to 2SD1415A  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
100  
100  
5  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
DC  
I
7  
C
Collector current  
Base current  
A
A
Pulse  
I
10  
CP  
I
0.7  
2.0  
B
JEDEC  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
JEITA  
30  
TOSHIBA  
2-10R1A  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 1.7 g (typ.)  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Equivalent Circuit  
Collector  
Base  
150 Ω  
5 kΩ  
Emitter  
1
2006-11-21  

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