Datasheet > 2SB1020_2014

2SB1020_2014

更新时间： 2024-11-09 01:19:15

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	150K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1020_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1020

DESCRIPTION

·With TO-220Fa package

·High DC current gain

·Low saturation voltage

·Complement to type 2SD1415

APPLICATIONS

·High power switching applications

·Hammer drive,pulse motor drive applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-5

UNIT

Open base

Open collector

-7

I_B

Base current

-0.2

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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