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2SB1018A-Y PDF预览

2SB1018A-Y

更新时间: 2024-09-19 12:58:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率双极晶体管PC
页数 文件大小 规格书
5页 171K
描述
TRANSISTOR 7 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10R1A, 3 PIN, BIP General Purpose Power

2SB1018A-Y 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SC-67包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.75Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):7 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:30 W最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SB1018A-Y 数据手册

 浏览型号2SB1018A-Y的Datasheet PDF文件第2页浏览型号2SB1018A-Y的Datasheet PDF文件第3页浏览型号2SB1018A-Y的Datasheet PDF文件第4页浏览型号2SB1018A-Y的Datasheet PDF文件第5页 
2SB1018A  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)  
2SB1018A  
High Current Switching Applications  
Unit: mm  
Power Amplifier Applications  
High collector current: I = 7 A  
C
Low collector saturation voltage: V  
= 0.5 V (max) (I = 4 A)  
C
CE (sat)  
Complementary to 2SD1411A  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
100  
80  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
I
7  
C
Base current  
I
1  
B
Ta = 25°C  
Tc = 25°C  
2.0  
Collector power  
dissipation  
JEDEC  
P
W
C
30  
JEITA  
Junction temperature  
T
150  
°C  
°C  
j
TOSHIBA  
2-10R1A  
Storage temperature range  
T
stg  
55 to 150  
Weight: 1.7 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-21  

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