Datasheet > 2SB0942P

2SB0942P

更新时间： 2024-11-22 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 4A I(C) \| TO-220AB

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中文翻译

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2SB0942P 数据手册

Power Transistors

2SB0942, 2SB0942A (2SB942, 2SB942A)

Silicon PNP epitaxial planar type

Unit: mm

For low-frequency power amplification

Complementary to 2SD1267 and 2SD1267A

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

ꢀ.7 ^0.ꢀ

I Features

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

φ ꢁ.1 0.1

•

Low collector to emitter saturation voltage V_CE(sat)

Full-pack package which can be installed to the heat sink with one

screw

1.ꢁ 0.ꢀ

1.4 0.1

I Absolute Maximum Ratings T_C= 25°C

+0.ꢀ

–0.1

0.5

Parameter

Symbol

Rating

Unit

0.8 0.1

2SB0942

2SB0942A

2SB0942

2SB0942A

V_CBO

−60

Collector to base

ꢀ.54 0.ꢁ

5.08 0.5

voltage

−80

1 : Base

2 : Collector

3 : Emitter

V_CEO

−60

Collector to

emitter voltage

−80

ꢀ ꢁ

EIAJ : SC-67

TO-220F Package

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

−5

−8

−4

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

−400

−700

−1

Unit

2SB0942

2SB0942A

2SB0942

2SB0942A

I_CES

V_CE= −60 V, V_BE= 0

V_CE= −80 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_CE= −60 V, I_B= 0

V_EB= −5 V, I_C= 0

I_C= −30 mA, I_B= 0

µA

Collector cutoff

current

I_CEO

µA

Collector cutoff

current

Emitter cutoff current

I_EBO

2SB0942

V_CEO

−60

−80

Collector to emitter

voltage

2SB0942A

Forward current transfer ratio

h_FE1

V_CE= −4 V, I_C= −1 A

250

h_FE2

V_BE

V_CE(sat)

f_T

V_CE= −4 V, I_C= −3 A

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

V_CE= −4 V, I_C= −3 A

−2

I_C= −4 A, I_B= − 0.4 A

−1.5

V_CE= −10 V, I_C= − 0.1 A, f = 10 MHz

I_C= −4 A, I_B1= − 0.4 A, I_B2= 0.4 A

0.2

0.5

0.2

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Ordering can be made by the common rank (PQ rank h_FE1= 70 to 250) in the

rank classification.

Rank

h_FE1

70 to 150

120 to 250

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3

中文翻译

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与2SB0942P相关器件

型号	品牌	获取价格	描述	数据表
2SB0942PQ	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB0942Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0942R	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0943P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-220F
2SB0943Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-220F
2SB0944	PANASONIC	获取价格	For Power Switching
2SB0944(2SB944)	ETC	获取价格	パワーデバイス－パワートランジスタ－汎用電力増幅
2SB0944\|2SB944	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0944P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0944PQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB

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