Datasheet > 2SB0946|2SB946

2SB0946|2SB946

更新时间： 2024-11-22 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	96K
描述
Power Device - Power Transistors - General-Purpose power amplification

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2SB0946|2SB946 数据手册

Power Transistors

2SB0946 (2SB946)

Silicon PNP epitaxial planar type

For power switching

Unit: mm

Complementary to 2SD1271

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

■ Features

φ 3.1 0.1

• Low collector-emitter saturation voltage V_CE(sat)

• Satisfactory linearity of forward current transfer ratio h_FE

• Large collector current I_C

1.3 0.2

• Full-pack package which can be installed to the heat sink with one screw

1.4 0.1

+0.2

–0.1

0.5

■ Absolute Maximum Ratings T_C= 25°C

0.8 0.1

Parameter

Symbol

Rating

−130

−80

−7

Unit

2.54 0.3

5.08 0.5

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

2 3

Collector current

I_C

I_CP

P_C

−7

TO-220F-A1 Package

Peak collector current

−15

Collector power

dissipation

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= −10 mA, I_B= 0

−80

V_CB= −100 V, I_E= 0

V_EB= −5 V, I_C= 0

−10

−50

µA



I_EBO

h_FE1

V_CE= −2 V, I_C= − 0.1 A

V_CE= −2 V, I_C= −3 A

h_FE2

260

− 0.5

−1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −5 A, I_B= − 0.25 A

V_BE(sat)I_C= −5 A, I_B= − 0.25 A

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

0.5

1.5

0.1

MHz

µs

I_C= −3 A, I_B1= − 0.3 A, I_B2= 0.3 A

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

60 to 120

90 to 180

130 to 260

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2003

SJD00025BED

12 3 4

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与2SB0946|2SB946相关器件

型号	品牌	获取价格	描述	数据表
2SB0946P	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0946PQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 7A I(C) \| SC-67
2SB0946Q	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0946R	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0947	PANASONIC	获取价格	For Low-Voltage Switcing
2SB0947(2SB947)	ETC	获取价格	パワーデバイス－パワートランジスタ－スイッチング
2SB0947\|2SB947	ETC	获取价格	Power Device - Power Transistors - Swicthing
2SB0947A	PANASONIC	获取价格	For Low-Voltage Switcing
2SB0947A(2SB947A)	ETC	获取价格	パワーデバイス－パワートランジスタ－スイッチング
2SB0947A\|2SB947A	ETC	获取价格	Power Device - Power Transistors - Swicthing

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