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2SB0946P PDF预览

2SB0946P

更新时间: 2024-11-26 21:10:51
品牌 Logo 应用领域
松下 - PANASONIC 局域网开关晶体管
页数 文件大小 规格书
4页 91K
描述
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3

2SB0946P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):7 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):130JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

2SB0946P 数据手册

 浏览型号2SB0946P的Datasheet PDF文件第2页浏览型号2SB0946P的Datasheet PDF文件第3页浏览型号2SB0946P的Datasheet PDF文件第4页 
Power Transistors  
2SB0946 (2SB946)  
Silicon PNP epitaxial planar type  
For power switching  
Unit: mm  
Complementary to 2SD1271  
10.0 0.2  
5.5 0.2  
4.2 0.2  
2.7 0.2  
Features  
φ 3.1 0.1  
Low collector-emitter saturation voltage VCE(sat)  
Satisfactory linearity of forward current transfer ratio hFE  
Large collector current IC  
1.3 0.2  
Full-pack package which can be installed to the heat sink with one screw  
1.4 0.1  
+0.2  
–0.1  
0.5  
Absolute Maximum Ratings TC = 25°C  
0.8 0.1  
Parameter  
Symbol  
Rating  
130  
80  
7  
Unit  
V
2.54 0.3  
5.08 0.5  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
1: Base  
V
2: Collector  
3: Emitter  
EIAJ: SC-67  
1
2 3  
V
Collector current  
IC  
ICP  
PC  
7  
A
TO-220F-A1 Package  
Peak collector current  
15  
40  
A
W
Collector power  
dissipation  
Ta = 25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
VCEO  
ICBO  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IC = 10 mA, IB = 0  
80  
VCB = −100 V, IE = 0  
VEB = −5 V, IC = 0  
10  
50  
µA  
µA  
IEBO  
hFE1  
VCE = −2 V, IC = − 0.1 A  
VCE = −2 V, IC = −3 A  
45  
60  
*
hFE2  
260  
0.5  
1.5  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = −5 A, IB = − 0.25 A  
VBE(sat) IC = −5 A, IB = − 0.25 A  
V
V
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = − 0.5 A, f = 10 MHz  
30  
0.5  
1.5  
0.1  
MHz  
µs  
IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A  
VCC = −50 V  
Storage time  
µs  
Fall time  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
R
Q
P
hFE2  
60 to 120  
90 to 180  
130 to 260  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: February 2003  
SJD00025BED  
1

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