Datasheet > 2SB0943Q

2SB0943Q

更新时间： 2024-11-22 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-220F

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中文翻译

获取价格

数据手册

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2SB0943Q 数据手册

Power Transistors

2SB0943

Silicon PNP epitaxial planar type

Unit: mm

For power switching

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

Complementary to 2SD1268

ꢀ.7 ^0.ꢀ

I Features

φ ꢁ.1 0.1

•

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory linearity of forward current transfer ratio h_FE

Large collector current I_C

Full-pack package which can be installed to the heat sink with one

screw

1.ꢁ 0.ꢀ

1.4 0.1

+0.ꢀ

–0.1

0.5

0.8 0.1

I Absolute Maximum Ratings T_C= 25°C

ꢀ.54 0.ꢁ

5.08 0.5

1 : Base

2 : Collector

3 : Emitter

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

−130

ꢀ ꢁ

EIAJ : SC-67

TO-220F Package

−80

−7

−6

I_C

−3

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I_CBO

Conditions

Min

Typ

Max

−10

−50

Unit

µA

V_CB= −100 V, I_E= 0

I_EBO

V_EB= −5 V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

V_CEO

h_FE1

I_C= −10 mA, I_B= 0

−80

V_CE= −2 V, I_C= − 0.1 A

V_CE= −2 V, I_C= − 0.5 A

I_C= −2 A, I_B= − 0.1 A

h_FE2

260

− 0.5

−1.5

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)

V_BE(sat)

f_T

I_C= −2 A, I_B= − 0.1 A

V_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

I_C= − 0.5 A, I_B1= −50 mA, I_B2= 50 mA

0.3

1.1

0.3

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3

中文翻译

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与2SB0943Q相关器件

型号	品牌	获取价格	描述	数据表
2SB0944	PANASONIC	获取价格	For Power Switching
2SB0944(2SB944)	ETC	获取价格	パワーデバイス－パワートランジスタ－汎用電力増幅
2SB0944\|2SB944	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0944P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0944PQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0944Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0945	PANASONIC	获取价格	For Power Switching
2SB0945(2SB945)	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0945\|2SB945	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0945P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-220AB