5秒后页面跳转
2SB0945PQ PDF预览

2SB0945PQ

更新时间: 2024-11-25 23:20:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 75K
描述
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220AB

2SB0945PQ 数据手册

 浏览型号2SB0945PQ的Datasheet PDF文件第2页浏览型号2SB0945PQ的Datasheet PDF文件第3页浏览型号2SB0945PQ的Datasheet PDF文件第4页 
Power Transistors  
2SB0945 (2SB945)  
Silicon PNP epitaxial planar type  
For power switching  
Unit: mm  
Complementary to 2SD1270  
10.0 0.2  
5.5 0.2  
4.2 0.2  
2.7 0.2  
Features  
I
G
Low collector to emitter saturation voltage VCE(sat)  
Satisfactory linearity of foward current transfer ratio hFE  
Large collector current IC  
G
φ3.1 0.1  
G
G
Full-pack package which can be installed to the heat sink with  
one screw  
1.3 0.2  
1.4 0.1  
Absolute Maximum Ratings (T =25˚C)  
I
C
+0.2  
–0.1  
0.5  
0.8 0.1  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–130  
2.54 0.25  
–80  
V
5.08 0.5  
–7  
V
1
2
3
–10  
A
1:Base  
2:Collector  
3:Emitter  
TO–220 Full Pack Package(a)  
IC  
–5  
A
Collector power TC=25°C  
40  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
I
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–10  
–50  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = –100V, IE = 0  
IEBO  
VCEO  
hFE1  
VEB = –5V, IC = 0  
IC = –10mA, IB = 0  
Collector to emitter voltage  
–80  
45  
V
CE = –2V, IC = – 0.1A  
Forward current transfer ratio  
*
hFE2  
VCE = –2V, IC = –2A  
90  
260  
– 0.5  
–1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –4A, IB = – 0.2A  
V
V
IC = –4A, IB = – 0.2A  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = –10V, IC = – 0.5A, f = 10MHz  
30  
MHz  
µs  
0.13  
0.5  
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A  
µs  
0.13  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
90 to 180  
130 to 260  
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

与2SB0945PQ相关器件

型号 品牌 获取价格 描述 数据表
2SB0945Q ETC

获取价格

TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-220AB
2SB0945R PANASONIC

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0946 PANASONIC

获取价格

For Power Switching
2SB0946(2SB946) ETC

获取价格

パワーデバイス - パワートランジスタ - 汎用電力増幅
2SB0946|2SB946 ETC

获取价格

Power Device - Power Transistors - General-Purpose power amplification
2SB0946P PANASONIC

获取价格

Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0946PQ ETC

获取价格

TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | SC-67
2SB0946Q PANASONIC

获取价格

Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0946R PANASONIC

获取价格

Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0947 PANASONIC

获取价格

For Low-Voltage Switcing