Datasheet > 2SB0944PQ

2SB0944PQ

更新时间： 2024-11-22 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	75K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB

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中文翻译

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数据手册

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2SB0944PQ 数据手册

Power Transistors

2SB0944 (2SB944)

Silicon PNP epitaxial planar type

For power switching

Unit: mm

Complementary to 2SD1269

10.0 0.2

5.5 0.2

4.2 0.2

2.7 0.2

Features

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory linearity of foward current transfer ratio h_FE

Large collector current I_C

φ3.1 0.1

Full-pack package which can be installed to the heat sink with

one screw

1.3 0.2

1.4 0.1

Absolute Maximum Ratings (T =25˚C)

+0.2

–0.1

0.5

0.8 0.1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–130

2.54 0.25

–80

5.08 0.5

–7

–8

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

I_C

–4

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–10

–50

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –100V, I_E= 0

I_EBO

V_CEO

h_FE1

V_EB= –5V, I_C= 0

I_C= –10mA, I_B= 0

Collector to emitter voltage

–80

_CE= –2V, I_C= – 0.1A

Forward current transfer ratio

h_FE2

V_CE= –2V, I_C= –1A

260

– 0.5

–1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –3A, I_B= – 0.15A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= –10V, I_C= – 0.5A, f = 10MHz

MHz

µs

0.15

0.8

I_C= –1A, I_B1= – 0.1A, I_B2= 0.1A

µs

0.15

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

Note: Ordering can be made by the common rank (PQ rank h_FE2= 90 to 260) in the rank classification.

Note.) The Part number in the Parenthesis shows conventional part number.

12 3 4

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与2SB0944PQ相关器件

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2SB0944Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0945	PANASONIC	获取价格	For Power Switching
2SB0945(2SB945)	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0945\|2SB945	ETC	获取价格	Power Device - Power Transistors - General-Purpose power amplification
2SB0945P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-220AB
2SB0945PQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-220AB
2SB0945Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-220AB
2SB0945R	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0946	PANASONIC	获取价格	For Power Switching
2SB0946(2SB946)	ETC	获取价格	パワーデバイス－パワートランジスタ－汎用電力増幅